This title appears in the Scientific Report :
2013
Chemical vapour deposition of chalcogenide phase change materials using digermane
Chemical vapour deposition of chalcogenide phase change materials using digermane
The use of digermane (Ge2H6) as a Ge-source was investigated for the low temperature metal organic chemical vapour deposition (MOCVD) of GexSbyTez (GST) films. Strong influence of the reactor pressure and growth temperature on the film morphology was observed by SEM and AFM imaging. The incorporatio...
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Personal Name(s): | Rieß, Sally (Corresponding author) |
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Schlösser, Daniela / Wiemann, Carsten / Hauer, Benedikt / Taubner, Thomas / Stoica, Toma / Grützmacher, Detlev / Hardtdegen, Hilde | |
Contributing Institute: |
Elektronische Eigenschaften; PGI-6 Halbleiter-Nanoelektronik; PGI-9 |
Imprint: |
2013
|
Physical Description: |
277 - 280 |
ISBN: |
978-3-89336-870-9 |
Conference: | 15th European Workshop on Metalorganic Vapour Phase Epitaxie, Aachen (Germany), 2013-06-02 - 2013-06-05 |
Document Type: |
Contribution to a conference proceedings |
Research Program: |
Frontiers of charge based Electronics |
Publikationsportal JuSER |
The use of digermane (Ge2H6) as a Ge-source was investigated for the low temperature metal organic chemical
vapour deposition (MOCVD) of GexSbyTez (GST) films. Strong influence of the reactor pressure and growth
temperature on the film morphology was observed by SEM and AFM imaging. The incorporation of Ge into
the GST crystalline structure was proven using Raman scattering and XPS measurements. |