This title appears in the Scientific Report : 2013 

Chemical vapour deposition of chalcogenide phase change materials using digermane
Rieß, Sally (Corresponding author)
Schlösser, Daniela / Wiemann, Carsten / Hauer, Benedikt / Taubner, Thomas / Stoica, Toma / Grützmacher, Detlev / Hardtdegen, Hilde
Elektronische Eigenschaften; PGI-6
Halbleiter-Nanoelektronik; PGI-9
2013
277 - 280
978-3-89336-870-9
15th European Workshop on Metalorganic Vapour Phase Epitaxie, Aachen (Germany), 2013-06-02 - 2013-06-05
Contribution to a conference proceedings
Frontiers of charge based Electronics
The use of digermane (Ge2H6) as a Ge-source was investigated for the low temperature metal organic chemical vapour deposition (MOCVD) of GexSbyTez (GST) films. Strong influence of the reactor pressure and growth temperature on the film morphology was observed by SEM and AFM imaging. The incorporation of Ge into the GST crystalline structure was proven using Raman scattering and XPS measurements.