This title appears in the Scientific Report :
2014
Please use the identifier:
http://dx.doi.org/10.1088/0957-4484/25/27/275302 in citations.
Please use the identifier: http://hdl.handle.net/2128/7828 in citations.
Advanced fabrication of Si nanowire FET structures by means of a parallel approach
Advanced fabrication of Si nanowire FET structures by means of a parallel approach
In this paper we present fabricated Si nanowires (NWs) of different dimensions with enhancedelectrical characteristics. The parallel fabrication process is based on nanoimprint lithographyusing high-quality molds, which facilitates the realization of 50 nm-wide NW field-effecttransistors (FETs). The...
Saved in:
Personal Name(s): | Li, Jing (Corresponding Author) |
---|---|
Pud, S. / Mayer, D. / Vitusevich, S. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Bioelektronik; PGI-8 |
Published in: | Nanotechnology, 25 (2014) 27, S. 275302 - |
Imprint: |
Bristol
IOP Publ.
2014
|
PubMed ID: |
24959696 |
DOI: |
10.1088/0957-4484/25/27/275302 |
Document Type: |
Journal Article |
Research Program: |
Sensorics and bioinspired systems |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/7828 in citations.
In this paper we present fabricated Si nanowires (NWs) of different dimensions with enhancedelectrical characteristics. The parallel fabrication process is based on nanoimprint lithographyusing high-quality molds, which facilitates the realization of 50 nm-wide NW field-effecttransistors (FETs). The imprint molds were fabricated by using a wet chemical anisotropicetching process. The wet chemical etch results in well-defined vertical sidewalls with edgeroughness (3σ) as small as 2 nm, which is about four times better compared with the roughnessusually obtained for reactive-ion etching molds. The quality of the mold was studied usingatomic force microscopy and scanning electron microscopy image data. The use of the highqualitymold leads to almost 100% yield during fabrication of Si NW FETs as well as to anexceptional quality of the surfaces of the devices produced. To characterize the Si NW FETs, weused noise spectroscopy as a powerful method for evaluating device performance and thereliability of structures with nanoscale dimensions. The Hooge parameter of fabricated FETstructures exhibits an average value of 1.6 × 10−3. This value reflects the high quality of Si NWFETs fabricated by means of a parallel approach that uses a nanoimprint mold and cost-efficienttechnology. |