This title appears in the Scientific Report :
2014
Please use the identifier:
http://dx.doi.org/10.1021/nl5010724 in citations.
Sensitivity Enhancement of Si Nanowire Field Effect Transistor Biosensors Using Single Trap Phenomena
Sensitivity Enhancement of Si Nanowire Field Effect Transistor Biosensors Using Single Trap Phenomena
Trapping–detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the...
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Personal Name(s): | Li, Jing |
---|---|
Pud, Sergii / Petrychuk, Michail / Offenhäusser, Andreas / Vitusevich, Svetlana (Corresponding Author) | |
Contributing Institute: |
JARA-FIT; JARA-FIT Bioelektronik; PGI-8 |
Published in: | Nano letters, 14 (2014) 6, S. 3504 - 3509 |
Imprint: |
Washington, DC
ACS Publ.
2014
|
DOI: |
10.1021/nl5010724 |
PubMed ID: |
24813644 |
Document Type: |
Journal Article |
Research Program: |
Sensorics and bioinspired systems |
Publikationsportal JuSER |
Trapping–detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect transistors (FETs) as a basic principle for a novel highly sensitive approach to monitor the gate surface potential. An increase in Si nanowire FET sensitivity of 400% was demonstrated |