This title appears in the Scientific Report :
2011
Please use the identifier:
http://dx.doi.org/10.1021/nl2013289 in citations.
X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor
X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor
For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigat...
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Personal Name(s): | Hrauda, N. |
---|---|
Zhang, J. / Wintersberger, E. / Etzelstorfer, T. / Mandl, B. / Stangl, J. / Carbone, D. / Holý, V. / Jovanovic, V. / Biasotto, C. / Nanver, L.K. / Moers, J. / Grützmacher, D. / Bauer, G. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Nano letters, 11 (2011) S. 2875 - 2880 |
Imprint: |
Washington, DC
ACS Publ.
2011
|
Physical Description: |
2875 - 2880 |
PubMed ID: |
21627099 |
DOI: |
10.1021/nl2013289 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Nano Letters
11 |
Subject (ZB): | |
Publikationsportal JuSER |
For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor. |