This title appears in the Scientific Report :
2011
Please use the identifier:
http://dx.doi.org/10.1063/1.3631013 in citations.
Please use the identifier: http://hdl.handle.net/2128/7321 in citations.
On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices
On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices
Currently, there is great interest in using solid electrolytes to develop resistive switching based nonvolatile memories (RRAM) and logic devices. Despite recent progress, our understanding of the microscopic origin of the switching process and its stochastic behavior is still limited. In order to u...
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Personal Name(s): | Soni, R. |
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Meuffels, P. / Staikov, G. / Weng, R. / Kügeler, C. / Petraru, A. / Hambe, M. / Waser, R. / Kohlstedt, H. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Elektronische Materialien; PGI-7 |
Published in: | Journal of applied physics, 110 (2011) S. 054509 |
Imprint: |
Melville, NY
American Institute of Physics
2011
|
Physical Description: |
054509 |
DOI: |
10.1063/1.3631013 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Applied Physics
110 |
Subject (ZB): | |
Link: |
Get full text Published under German "Allianz" Licensing conditions on 2011-09-09. Available in OpenAccess from 2011-09-09 |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/7321 in citations.
Currently, there is great interest in using solid electrolytes to develop resistive switching based nonvolatile memories (RRAM) and logic devices. Despite recent progress, our understanding of the microscopic origin of the switching process and its stochastic behavior is still limited. In order to understand this behavior, we present a statistical "breakdown" analysis performed on Cu doped Ge0.3Se0.7 based memory devices under elevated temperature and constant voltage stress conditions. Following the approach of electrochemical phase formation, the precursor of the "ON resistance switching" is considered to be nucleation - the emergence of small clusters of atoms carrying the basic properties of the new phase which forms the conducting filament. Within the framework of nucleation theory, the observed fluctuations in the time required for "ON resistance switching" are found to be consistent with the stochastic nature of critical nucleus formation. (C) 2011 American Institute of Physics. [doi:10.1063/1.3631013] |