This title appears in the Scientific Report :
2011
Please use the identifier:
http://dx.doi.org/10.1063/1.3531990 in citations.
Please use the identifier: http://hdl.handle.net/2128/7333 in citations.
Ambipolar charge transport in microcrystalline silicon thin-film transistors
Ambipolar charge transport in microcrystalline silicon thin-film transistors
Hydrogenated microcrystalline silicon (mu c-Si:H) is a promising candidate for thin-film transistors (TFTs) in large-area electronics due to high electron and hole charge carrier mobilities. We report on ambipolar TFTs based on mu c-Si: H prepared by plasma-enhanced chemical vapor deposition at temp...
Saved in:
Personal Name(s): | Knipp, D. |
---|---|
Chan, K. Y. / Gordijn, A. / Marinkovic, M. / Stiebig, H. | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | Journal of applied physics, 109 (2011) S. 024504 |
Imprint: |
Melville, NY
American Institute of Physics
2011
|
Physical Description: |
024504 |
DOI: |
10.1063/1.3531990 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Journal of Applied Physics
109 |
Subject (ZB): | |
Link: |
Get full text Published under German "Allianz" Licensing conditions on 2011-01-19. Available in OpenAccess from 2011-01-19 |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/7333 in citations.
Hydrogenated microcrystalline silicon (mu c-Si:H) is a promising candidate for thin-film transistors (TFTs) in large-area electronics due to high electron and hole charge carrier mobilities. We report on ambipolar TFTs based on mu c-Si: H prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with flexible substrates. Electrons and holes are directly injected into the mu c-Si: H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carrier mobilities of 30-50 cm(2)/V s and 10-15 cm(2)/V s, respectively. In this work, the electrical characteristics of the ambipolar mu c-Si: H TFTs are described by a simple analytical model that takes the ambipolar charge transport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar mu c-Si: H TFTs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3531990] |