This title appears in the Scientific Report :
2014
Please use the identifier:
http://dx.doi.org/10.1139/cjp-2013-0636 in citations.
Investigation of porosity and atmospheric gas diffusion in microcrystalline silicon fabricated at high growth rates
Investigation of porosity and atmospheric gas diffusion in microcrystalline silicon fabricated at high growth rates
The effects of postdeposition air exposure of microcrystalline silicon films, prepared at varied deposition rates, are investigated. The changes in the oxygen content, evaluated from Fourier transform infrared spectroscopy measurements, were studied over a period of time after deposition (up to 180...
Saved in:
Personal Name(s): | Michard, S. |
---|---|
Meier, Matthias (Corresponding Author) / Zastrow, U. / Astakhov, O. / Finger, F. | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | Canadian journal of physics, 92 (2014) 7/8, S. 774 - 777 |
Imprint: |
Ottawa, Ontario
NRC Research Press
2014
|
DOI: |
10.1139/cjp-2013-0636 |
Document Type: |
Journal Article |
Research Program: |
Thin Film Photovoltaics |
Publikationsportal JuSER |
The effects of postdeposition air exposure of microcrystalline silicon films, prepared at varied deposition rates, are investigated. The changes in the oxygen content, evaluated from Fourier transform infrared spectroscopy measurements, were studied over a period of time after deposition (up to 180 days) depending on deposition rate and Raman intensity ratio. Two types of behavior were identified: in the case of highly crystalline samples, an oxygen uptake increases with increasing Raman intensity ratio; while less crystalline samples were found to be more stable against oxygen incorporation. These observations are related to the film microstructure and porosity and are linked to the variations in Raman intensity ratio and growth rate of microcrystalline silicon films. |