This title appears in the Scientific Report :
2014
Novel Douple-Level-T-Gate tecnology
Novel Douple-Level-T-Gate tecnology
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The major advantage of our process is its use of only standard optical lithography. It allows the f...
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Personal Name(s): | Fox, Alfred (Corresponding Author) |
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Mikulics, Martin / Hardtdegen, Hilde / Trellenkamp, Stefan / Arango, Y:C: / Grützmacher, Detlev / Gregusova, D. / Sofer, Z. / Novak, J. / Kordos, P. / Marso, M. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 |
Published in: | 2014 |
Imprint: |
2014
|
Conference: | ASDAM 2014, Smolenice (Slovakia), 2014-10-20 - 2014-10-22 |
Document Type: |
Poster |
Research Program: |
Frontiers of charge based Electronics |
Subject (ZB): | |
Publikationsportal JuSER |
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The major advantage of our process is its use of only standard optical lithography. It allows the fabrication of 100 nanometer size T-gates for transistors. High electron mobility transistors (HEMTs) were fabricated on an AlGaN/GaN/sapphire material structure with an original gate length Lg of 2 µm. Their cutoff frequency of 6 GHz was improved to 60 GHz by etching the gate to a 200 nm length double T-gate contact. |