This title appears in the Scientific Report :
2011
Please use the identifier:
http://hdl.handle.net/2128/20503 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.84.241107 in citations.
Mechanism for large thermoelectric power in molecular quantum dots described by the negative-U Anderson model
Mechanism for large thermoelectric power in molecular quantum dots described by the negative-U Anderson model
We investigate, with the aid of numerical renormalization group techniques, the thermoelectric properties of a molecular quantum dot described by the negative-U Anderson model. We show that the charge Kondo effect provides a mechanism for enhanced thermoelectric power via a correlation-induced asymm...
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Personal Name(s): | Andergassen, S. |
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Costi, T.A. / Zlatic, V. | |
Contributing Institute: |
Theoretische Nanoelektronik; PGI-2 JARA - HPC; JARA-HPC Theoretische Nanoelektronik; IAS-3 |
Published in: | Physical Review B Physical review / B, 84 84 (2011 2011) 24 24, S. 241107 241107 |
Imprint: |
College Park, Md.
APS
2011
|
Physical Description: |
241107 |
DOI: |
10.1103/PhysRevB.84.241107 |
Document Type: |
Journal Article |
Research Program: |
Thermoelectric properties of self-assembled quantum dots and oxide heterostructure interfaces Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physical Review B
84 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.84.241107 in citations.
We investigate, with the aid of numerical renormalization group techniques, the thermoelectric properties of a molecular quantum dot described by the negative-U Anderson model. We show that the charge Kondo effect provides a mechanism for enhanced thermoelectric power via a correlation-induced asymmetry in the spectral function close to the Fermi level. We show that this effect results in a dramatic enhancement of the Kondo-induced peak in the thermopower of negative-U systems with Seebeck coefficients exceeding 50 mu V/K over a wide range of gate voltages. |