This title appears in the Scientific Report :
2014
Please use the identifier:
http://dx.doi.org/10.1088/0022-3727/47/17/175103 in citations.
Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal-polar GaN/AlInGaN interfaces
Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal-polar GaN/AlInGaN interfaces
Novel nitride-based heterostructures have been fabricated demonstrating two-dimensional hole gases as the basis for p-channel transistors. The carrier density in the 2DHG is adjusted between very high values of 2 × 1013 cm−2 and low values of 6 × 1011 cm−2 by the polarization difference, ΔP, between...
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Personal Name(s): | Reuters, B. (Corresponding Author) |
---|---|
Hahn, H. / Pooth, A. / Holländer, B. / Breuer, Uwe / Heuken, M. / Kalisch, H. / Vescan, A. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 JARA-FIT; JARA-FIT Analytik; ZEA-3 |
Published in: | Journal of physics / D, 47 (2014) 17, S. 175103 |
Imprint: |
Bristol
IOP Publ.
2014
|
DOI: |
10.1088/0022-3727/47/17/175103 |
Document Type: |
Journal Article |
Research Program: |
Frontiers of charge based Electronics |
Publikationsportal JuSER |
Novel nitride-based heterostructures have been fabricated demonstrating two-dimensional hole gases as the basis for p-channel transistors. The carrier density in the 2DHG is adjusted between very high values of 2 × 1013 cm−2 and low values of 6 × 1011 cm−2 by the polarization difference, ΔP, between quaternary AlInGaN backbarriers and a GaN channel on top. Record mobilities for holes in GaN of 43 cm2 V−1 s−1 (median 30 cm2 V−1 s−1) are observed for a moderate 2DHG density of 1.3 × 1012 cm−2 (median 2.2 × 1012 cm−2).Heterostructures with different backbarrier compositions are processed to field effect transistors and show a systematic threshold voltage shift from positive to negative values according to the corresponding 2DHG density. It is shown for the first time that by appropriate polarization-engineering through changing the AlInGaN composition, both depletion and enhancement mode behaviour can be achieved for p-channel devices.Drain current densities |Id| above 40 mA mm−1 at a drain source voltage Vds of −10 V are achieved for heterostructures with high polarization differences, ΔP, between AlInGaN backbarrier and GaN channel. Reducing ΔP leads to decreasing on-state drain currents |Id| with a simultaneous reduction in off-state current. This results in very large on/off ratios of up to 108 for enhancement mode devices, demonstrating record performances and great potential for future applications. |