This title appears in the Scientific Report :
2015
Please use the identifier:
http://dx.doi.org/10.1021/am5075248 in citations.
High- k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
High- k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limit...
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Personal Name(s): | Wirths, Stephan |
---|---|
Stange, Daniela / Pampillon, Maria / Tiedemann, Andreas / Mussler, Gregor / Fox, Alfred / Breuer, Uwe / Baert, Bruno / San Andrés, Enrique / Nguyen, Ngoc D. / Hartmann, Jean-Michel / Ikonic, Zoran / Mantl, Siegfried / Buca, Dan Mihai (Corresponding Author) | |
Contributing Institute: |
Analytik; ZEA-3 JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | ACS applied materials & interfaces, 7 (2015) 1, S. 62 - 67 |
Imprint: |
Washington, DC
Soc.
2015
|
PubMed ID: |
25531887 |
DOI: |
10.1021/am5075248 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance–voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations. |