This title appears in the Scientific Report :
2014
Please use the identifier:
http://dx.doi.org/10.1038/srep06975 in citations.
Please use the identifier: http://hdl.handle.net/2128/9096 in citations.
Determination of the electrostatic potential distribution in Pt/Fe:SrTiO$_{3}$/Nb:SrTiO$_{3}$ thin-film structures by electron holography
Determination of the electrostatic potential distribution in Pt/Fe:SrTiO$_{3}$/Nb:SrTiO$_{3}$ thin-film structures by electron holography
We determined the electrostatic potential distribution in pristine Pt/Fe:SrTiO3/Nb:SrTiO3 structures by electron holography experiments, revealing the existence of a depletion layer extending into the Nb-doped bottom electrode. Simulations of potential profiles in metal-insulator-metal structures we...
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Personal Name(s): | Marchewka, Astrid |
---|---|
Cooper, David / Lenser, Christian / Menzel, Stephan (Corresponding Author) / Du, Hongchu / Dittmann, Regina / Dunin-Borkowski, Rafal / Waser, R. | |
Contributing Institute: |
Elektronische Materialien; PGI-7 Mikrostrukturforschung; PGI-5 |
Published in: | Scientific reports, 4 (2014) S. 6975 |
Imprint: |
London
Nature Publishing Group
2014
|
DOI: |
10.1038/srep06975 |
Document Type: |
Journal Article |
Research Program: |
Peter Grünberg-Centre (PG-C) |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/9096 in citations.
We determined the electrostatic potential distribution in pristine Pt/Fe:SrTiO3/Nb:SrTiO3 structures by electron holography experiments, revealing the existence of a depletion layer extending into the Nb-doped bottom electrode. Simulations of potential profiles in metal-insulator-metal structures were conducted assuming different types and distributions of dopants. It is found that the presence of acceptor-type dopant concentrations at the Fe:SrTiO3/Nb:SrTiO3 interface with a donor-doped insulating layer provides a good match to the measured profile. Such acceptor-type interface concentrations may be associated with Sr vacancies on the Nb:SrTiO3 side of the bottom interface. |