This title appears in the Scientific Report :
2002
Please use the identifier:
http://hdl.handle.net/2128/1039 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevLett.88.016102 in citations.
Quantitative determination of the metastability of flat Ag overlayers on GaAs(110)
Quantitative determination of the metastability of flat Ag overlayers on GaAs(110)
Atomically flat ultrathin Ag films on GaAs(I 10) can be formed through a kinetic pathway. However, such films are metastable and will transform to 3D islands upon high temperature annealing. Using scanning tunneling microscopy, we have measured quantitatively the layer-resolved metastability of flat...
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Personal Name(s): | Yu, H. |
---|---|
Jiang, C. S. / Ebert, P. / Wang, X. D. / White, J. M. / Niu, Q. / Zhang, Z. / Shih, C. K. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-IMF |
Published in: | Physical review letters, 88 (2002) S. 016102-1 - 016102-4 |
Imprint: |
College Park, Md.
APS
2002
|
Physical Description: |
016102-1 - 016102-4 |
DOI: |
10.1103/PhysRevLett.88.016102 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Physical Review Letters
88 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevLett.88.016102 in citations.
Atomically flat ultrathin Ag films on GaAs(I 10) can be formed through a kinetic pathway. However, such films are metastable and will transform to 3D islands upon high temperature annealing. Using scanning tunneling microscopy, we have measured quantitatively the layer-resolved metastability of flat Ag overlayers as they evolve toward their stable state, and deduced the corresponding kinetic barrier the system has to overcome in reaching the stable state. These results indicate that the metastability of the Ag overlayer is defined by the quantum nature of the conduction electrons confined within the overlayer. |