This title appears in the Scientific Report :
2002
Please use the identifier:
http://hdl.handle.net/2128/1043 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1506404 in citations.
Probing the step structure of buried metal/semiconductor interfaces using quantized electron states : the case of Pb on Si(111)6x6-Au
Probing the step structure of buried metal/semiconductor interfaces using quantized electron states : the case of Pb on Si(111)6x6-Au
The three-dimensional step structure at the buried Pb on Si(111) 6x6-Au interface is determined by utilizing the presence of quantum well states. We demonstrate that the spatial step positions as well as the step heights can be extracted nondestructively and with atomic layer precision by scanning t...
Saved in:
Personal Name(s): | Yu, H. |
---|---|
Jiang, C. S. / Ebert, P. / Shilh, C. K. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-IMF |
Published in: | Applied physics letters, 81 (2002) S. 2005 - 2007 |
Imprint: |
Melville, NY
American Institute of Physics
2002
|
Physical Description: |
2005 - 2007 |
DOI: |
10.1063/1.1506404 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Applied Physics Letters
81 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.1506404 in citations.
The three-dimensional step structure at the buried Pb on Si(111) 6x6-Au interface is determined by utilizing the presence of quantum well states. We demonstrate that the spatial step positions as well as the step heights can be extracted nondestructively and with atomic layer precision by scanning tunneling microscopy and spectroscopy. (C) 2002 American Institute of Physics. |