This title appears in the Scientific Report :
2011
Please use the identifier:
http://dx.doi.org/10.1016/j.solmat.2011.05.035 in citations.
Incorporation and critical concentration of oxygen in a-Si:H solar cells
Incorporation and critical concentration of oxygen in a-Si:H solar cells
For different process conditions, series of hydrogenated amorphous silicon p-i-n solar cells with various oxygen concentrations in the intrinsic absorber layer were fabricated by plasma-enhanced chemical vapor deposition at 13.56 MHz using process gas mixtures of SiH4 and H-2. Oxygen was introduced...
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Personal Name(s): | Woerdenweber, J. |
---|---|
Merdzhanova, T. / Gordijn, A. / Stiebig, H. / Beyer, W. | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | Solar energy materials & solar cells, 95 (2011) S. 2811 - 2815 |
Imprint: |
Amsterdam
North Holland
2011
|
Physical Description: |
2811 - 2815 |
DOI: |
10.1016/j.solmat.2011.05.035 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Solar Energy Materials and Solar Cells
95 |
Subject (ZB): | |
Publikationsportal JuSER |
For different process conditions, series of hydrogenated amorphous silicon p-i-n solar cells with various oxygen concentrations in the intrinsic absorber layer were fabricated by plasma-enhanced chemical vapor deposition at 13.56 MHz using process gas mixtures of SiH4 and H-2. Oxygen was introduced into the gas phase during the deposition process by a controllable leak in the chamber wall and the amount of oxygen supply is characterized by the oxygen base pressure P-b. It is found that for a certain deposition regime defined by silane and H-2 flows, deposition pressure and substrate temperature the oxygen incorporation follows an expected dependence on the ratio p(b)/r(d) with r(d) the deposition rate. This relation is not valid for the comparison of different deposition regimes. A high hydrogen flow is found to reduce the oxygen incorporation strongly. The photovoltaic parameters of the solar cells were measured in the initial state as well as after 1000 h of light-soaking. The critical oxygen concentration (i.e. the upper limit of incorporated oxygen not leading to a decay of the solar cell performance) was determined for each regime in the initial and light-soaked state. For all deposition regimes, the results show no difference in these critical oxygen concentrations for the initial and light-soaked state. The critical oxygen concentration, is found to differ for the different process regimes and turns out to be the highest (approximately 1 x 10(20) cm(-3)) for the deposition regime with the highest hydrogen flow rate, which interestingly is the regime with the lowest oxygen incorporation at a given p(b)/r(d) ratio. This combination makes the regime of high hydrogen gas flow suitable for depositing high-efficiency solar cells at high base pressure. (C) 2011 Elsevier B.V. All rights reserved. |