The antiferromagnetic structures of IrMn$_{3}$ and their influence on exchange-bias
The antiferromagnetic structures of IrMn$_{3}$ and their influence on exchange-bias
We have determined the magnetic structures of single-crystal thin-films of IrMn3 for the crystallographic phases of chemically-ordered L12, and for chemically-disordered face-centred-cubic, which is the phase typically chosen for information-storage devices. For the chemically-ordered L12 thin-film,...
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Personal Name(s): | Kohn, A. (Corresponding Author) |
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Kovács, A. / Fan, R. / McIntyre, G. J. / Ward, R. C. C. / Goff, J. P. | |
Contributing Institute: |
Mikrostrukturforschung; PGI-5 |
Published in: | Scientific reports, 3 (2013) S. 2045 - 2322 |
Imprint: |
London
Nature Publishing Group
2013
|
DOI: |
10.1038/srep02412 |
Document Type: |
Journal Article |
Research Program: |
Peter Grünberg-Centre (PG-C) |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/8850 in citations.
We have determined the magnetic structures of single-crystal thin-films of IrMn3 for the crystallographic phases of chemically-ordered L12, and for chemically-disordered face-centred-cubic, which is the phase typically chosen for information-storage devices. For the chemically-ordered L12 thin-film, we find the same triangular magnetic structure as reported for the bulk material. We determine the magnetic structure of the chemically-disordered face-centred-cubic alloy for the first time, which differs from theoretical predictions, with magnetic moments tilted away from the crystal diagonals towards the face-planes. We study the influence of these two antiferromagnetic structures on the exchange-bias properties of an epitaxial body-centred-cubic Fe layer showing that magnetization reversal mechanism and bias-field in the ferromagnetic layer is altered significantly. We report a change of reversal mechanism from in-plane nucleation of 90° domain-walls when coupled to the newly reported cubic structure towards a rotational process, including an out-of-plane magnetization component when coupled to the L12 triangular structure. |