Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
Nanometric inclusions filled with nitrogen, located adjacent to Fe n N (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncati...
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Personal Name(s): | Kovács, A. (Corresponding Author) |
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Schaffer, B. / Moreno, M. S. / Jinschek, J. R. / Craven, A. J. / Dietl, T. / Bonanni, A. / Dunin-Borkowski, Rafal | |
Contributing Institute: |
Mikrostrukturforschung; PGI-5 |
Published in: | Journal of applied physics, 114 (2013) 3, S. 033530 - |
Imprint: |
Melville, NY
American Inst. of Physics
2013
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DOI: |
10.1063/1.4816049 |
Document Type: |
Journal Article |
Research Program: |
Peter Grünberg-Centre (PG-C) |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.4816049 in citations.
Nanometric inclusions filled with nitrogen, located adjacent to Fe n N (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusions. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.4 ± 0.3 g/cm3. These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of Fe n N (n > 1) nanocrystals during growth. |