This title appears in the Scientific Report :
2015
Please use the identifier:
http://hdl.handle.net/2128/8862 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.90.205134 in citations.
Buried topological edge state associated with interface between topological band insulator and Mott insulator
Buried topological edge state associated with interface between topological band insulator and Mott insulator
The electronic structure at the interface between a topological band insulator and a Mott insulator is studied within layer dynamical mean field theory. To represent the bulk phases of these systems, we use the generalized Bernevig-Hughes-Zhang model that incorporates the Hubbard-like on-site Coulom...
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Personal Name(s): | Ishida, H. (Corresponding Author) |
---|---|
Liebsch, A. | |
Contributing Institute: |
Quanten-Theorie der Materialien; IAS-1 Quanten-Theorie der Materialien; PGI-1 |
Published in: | Physical Review B Physical review / B, 90 90 (2014 2014) 20 20, S. 205134 205134 |
Imprint: |
College Park, Md.
APS
2014
|
DOI: |
10.1103/PhysRevB.90.205134 |
Document Type: |
Journal Article |
Research Program: |
Spin-based and quantum information |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.90.205134 in citations.
The electronic structure at the interface between a topological band insulator and a Mott insulator is studied within layer dynamical mean field theory. To represent the bulk phases of these systems, we use the generalized Bernevig-Hughes-Zhang model that incorporates the Hubbard-like on-site Coulomb energy U in addition to the spin-orbit coupling term that causes band inversion. The topological and Mott insulating phases are realized by appropriately choosing smaller and larger values of U, respectively. As expected, the interface is found to be metallic because of the localized edge state. When the Coulomb energy in the Mott insulator is close to the critical value, however, this edge state exhibits its largest amplitude deep within the Mott insulator rather than at the interface. This finding corresponds to a new type of proximity effect induced by the neighboring topological band insulator and demonstrates that, as a result of spin-orbit coupling within the Mott insulator, several layers near the interface convert from the Mott insulating phase to a topological insulating phase. Moreover, we argue that the ordinary proximity effect, whereby a Kondo peak is induced in a Mott insulator by neighboring metallic states, is accompanied by an additional reverse proximity effect, by which the Kondo peak gives rise to an enhancement of the density of states in the neighboring metallic layer. |