Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation
Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation
In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 μA/μm for n-type devices with As segregation at Vgs − Vt = 3 V and Vds = 1.2 V and 427 μA/μm...
Saved in:
Personal Name(s): | Urban, C. (Corresponding author) |
---|---|
Emam, M. / Sandow, C. / Zhao, Q. T. / Fox, A. / Mantl, S. / Raskin, J.-P. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Solid state electronics, 54 (2010) 9, S. 877 - 882 |
Imprint: |
Oxford [u.a.]
Pergamon, Elsevier Science
2010
|
DOI: |
10.1016/j.sse.2010.04.013 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 μA/μm for n-type devices with As segregation at Vgs − Vt = 3 V and Vds = 1.2 V and 427 μA/μm for p-type devices with B segregation at Vgs − Vt = −2.8 V and Vds = −1.2 V. A detailed high-frequency characterization proves the high-performance of the devices with cut-off frequencies fT of 117 GHz for n-type and 63 GHz for p-type Schottky barrier MOSFETs and clearly elucidates the effects of extrinsic and intrinsic device parameters as a function of the gate length. |