This title appears in the Scientific Report :
2015
Please use the identifier:
http://dx.doi.org/10.1016/j.mee.2015.04.083 in citations.
Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers
Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers
Homogeneous nickel germanosilicide layers with low sheet resistance have been achieved on highly strained SiGe layers. The layer homogeneity improves with decreasing Ni thickness. Ultrathin Ni layers of 3 nm thermally treated at 400 °C yield to homogeneous germanosilicide layers with a preferential...
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Personal Name(s): | Liu, Linjie (Corresponding author) |
---|---|
Knoll, Lars / Wirths, Stephan / Xu, Dawei / Mussler, Gregor / Breuer, Uwe / Holländer, Bernhard / Di, Zengfeng / Zhang, Miao / Mantl, Siegfried / Zhao, Qing-Tai (Corresponding author) | |
Contributing Institute: |
Analytik; ZEA-3 Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Microelectronic engineering, 139 (2015) S. 26 - 30 |
Imprint: |
[S.l.] @
Elsevier
2015
|
DOI: |
10.1016/j.mee.2015.04.083 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
Homogeneous nickel germanosilicide layers with low sheet resistance have been achieved on highly strained SiGe layers. The layer homogeneity improves with decreasing Ni thickness. Ultrathin Ni layers of 3 nm thermally treated at 400 °C yield to homogeneous germanosilicide layers with a preferential {0 1 0} growth plane and sharp interfaces to the SiGe layer. This is assumed to be energetically driven by lower surface and interface energies due to the increased surface/volume ratio with decreasing layer thickness. The strain in the remaining SiGe layers can be conserved at lower temperatures. However, at higher temperatures, germanosilicidation enhances the strain relaxation. |