This title appears in the Scientific Report :
2015
Please use the identifier:
http://dx.doi.org/10.1016/j.jallcom.2015.08.135 in citations.
Polymorphous GdScO$_{3}$ as high permittivity dielectric
Polymorphous GdScO$_{3}$ as high permittivity dielectric
Four different polymorphs of GdScO3 are assessed theoretically and experimentally with respectto their suitability as a dielectric. The calculations carried out by density functional theory reveallattice constants, band gaps and the energies of formation of three crystal phases. Experimentallyall th...
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Personal Name(s): | Schäfer, Anna |
---|---|
Rahmanizadeh, K. / Bihlmayer, G. / Luysberg, M. / Wendt, F. / Besmehn, A. / Fox, A. / Schnee, M. / Niu, G. / Schroeder, T. / Mantl, S. / Hardtdegen, H. / Mikulics, M. / Schubert, J. (Corresponding author) | |
Contributing Institute: |
Quanten-Theorie der Materialien; PGI-1 JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 Analytik; ZEA-3 Quanten-Theorie der Materialien; IAS-1 Elektronische Eigenschaften; PGI-6 Mikrostrukturforschung; PGI-5 |
Published in: | Journal of alloys and compounds, 651 (2015) S. 514–520 |
Imprint: |
Lausanne
Elsevier
2015
|
DOI: |
10.1016/j.jallcom.2015.08.135 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena Controlling Spin-Based Phenomena |
Publikationsportal JuSER |
Four different polymorphs of GdScO3 are assessed theoretically and experimentally with respectto their suitability as a dielectric. The calculations carried out by density functional theory reveallattice constants, band gaps and the energies of formation of three crystal phases. Experimentallyall three crystal phases and the amorphous phase can be realized as thin films by pulsed laserdeposition using various growth templates. Their respective crystal structures are confirmed byx-ray diffraction and transmission electron microscopy reflecting the calculated lattice constants.X-ray photoelectron spectroscopy unveils the band gaps of the different polymorphs of GdScO3which are above 5 eV for all films demonstrating good insulating properties. From capacitancevoltage measurements, high permittivities of up to 27 for hexagonal GdScO3 are deduced. |