This title appears in the Scientific Report :
2012
Please use the identifier:
http://hdl.handle.net/2128/7463 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.3672447 in citations.
Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures
Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures
Plastic strain relaxation of SiGe layers of different crystal orientations is analytically analyzed and compared with experimental results. First, strain relaxation induced by ion implantation and annealing, considering dislocation loop punching and loop interactions with interfaces/surfaces is disc...
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Personal Name(s): | Trinkaus, H. |
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Buca, D. / Minamisawa, R.A. / Holländer, B. / Luysberg, M. / Mantl, S. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Mikrostrukturforschung; PGI-5 Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Journal of applied physics, 111 (2012) S. 014904 |
Imprint: |
Melville, NY
American Institute of Physics
2012
|
Physical Description: |
014904 |
DOI: |
10.1063/1.3672447 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Applied Physics
111 |
Subject (ZB): | |
Link: |
Get full text Published under German "Allianz" Licensing conditions on 2012-01-05. Available in OpenAccess from 2012-01-05 |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.3672447 in citations.
Plastic strain relaxation of SiGe layers of different crystal orientations is analytically analyzed and compared with experimental results. First, strain relaxation induced by ion implantation and annealing, considering dislocation loop punching and loop interactions with interfaces/surfaces is discussed. A flexible curved dislocation model is used to determine the relation of critical layer thickness with strain/stress. Specific critical conditions to be fulfilled, at both the start and end of the relaxation, are discussed by introducing a quality parameter for efficient strain relaxation, defined as the ratio of real to ideal critical thickness versus strain/stress. The anisotropy of the resolved shear stress is discussed for (001) and (011) crystal orientations in comparison with the experimentally observed anisotropy of strain relaxation for Si/SiGe heterostructures. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3672447] |