This title appears in the Scientific Report :
2012
Please use the identifier:
http://dx.doi.org/10.1007/s11664-011-1870-z in citations.
Sb2Te3 and Bi2Te3 Thin Films Grown by Room-Temperature MBE
Sb2Te3 and Bi2Te3 Thin Films Grown by Room-Temperature MBE
Sb2Te3 and Bi2Te3 thin films were grown on SiO2 and BaF2 substrates at room temperature using molecular beam epitaxy. Metallic layers with thicknesses of 0.2 nm were alternately deposited at room temperature, and the films were subsequently annealed at 250A degrees C for 2 h. x-Ray diffraction and e...
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Personal Name(s): | Aabdin, Z. |
---|---|
Peranio, N. / Winkler, M. / Bessas, D. / König, J. / Hermann, R. / Böttner, H. / Eibl, O. | |
Contributing Institute: |
Streumethoden; PGI-4 JARA-FIT; JARA-FIT Streumethoden; JCNS-2 |
Published in: | Journal of electronic materials, 41 (2012) S. 1493 - 1497 |
Imprint: |
Warrendale, Pa
TMS
2012
|
Physical Description: |
1493 - 1497 |
DOI: |
10.1007/s11664-011-1870-z |
Document Type: |
Journal Article |
Research Program: |
In-house Research with PNI Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Electronic Materials
41 |
Subject (ZB): | |
Publikationsportal JuSER |
Sb2Te3 and Bi2Te3 thin films were grown on SiO2 and BaF2 substrates at room temperature using molecular beam epitaxy. Metallic layers with thicknesses of 0.2 nm were alternately deposited at room temperature, and the films were subsequently annealed at 250A degrees C for 2 h. x-Ray diffraction and energy-filtered transmission electron microscopy (TEM) combined with high-accuracy energy-dispersive x-ray spectrometry revealed stoichiometric films, grain sizes of less than 500 nm, and a texture. High-quality in-plane thermoelectric properties were obtained for Sb2Te3 films at room temperature, i.e., low charge carrier density (2.6 x 10(19) cm(-3)), large thermopower (130 V K-1), large charge carrier mobility (402 cm(2) V-1 s(-1)), and resulting large power factor (29 W cm(-1) K-2). Bi2Te3 films also showed low charge carrier density (2.7 x 10(19) cm(-3)), moderate thermopower (-153 V K-1), but very low charge carrier mobility (80 cm(2) V-1 s(-1)), yielding low power factor (8 W cm(-1) K-2). The low mobilities were attributed to Bi-rich grain boundary phases identified by analytical energy-filtered TEM. |