This title appears in the Scientific Report :
2012
Please use the identifier:
http://dx.doi.org/10.1021/la204393h in citations.
Electrically Conducting Nanopatterns Formed by Chemical e-Beam Lithography via Gold Nanoparticle Seeds
Electrically Conducting Nanopatterns Formed by Chemical e-Beam Lithography via Gold Nanoparticle Seeds
We report the formation of thiol nanopatterns on SAM covered silicon wafers by converting sulfonic acid head groups via e-beam lithography. These thiol groups act as binding sites for gold nanoparticles, which can be enhanced to form electrically conducting nanostructures. This approach serves as a...
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Personal Name(s): | Schaal, P.A. |
---|---|
Besmehn, A. / Maynicke, E. / Noyong, M. / Beschoten, B. / Simon, U. | |
Contributing Institute: |
Zentralabteilung für Chemische Analysen; ZCH JARA-FIT; JARA-FIT |
Published in: | Langmuir, 28 (2012) S. 2448 - 2454 |
Imprint: |
Washington, DC
ACS Publ.
2012
|
Physical Description: |
2448 - 2454 |
PubMed ID: |
22201225 |
DOI: |
10.1021/la204393h |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Langmuir
28 |
Subject (ZB): | |
Publikationsportal JuSER |
We report the formation of thiol nanopatterns on SAM covered silicon wafers by converting sulfonic acid head groups via e-beam lithography. These thiol groups act as binding sites for gold nanoparticles, which can be enhanced to form electrically conducting nanostructures. This approach serves as a proof-of-concept for the combination of top-down and bottom-up processes for the generation of electrical devices on silicon. |