This title appears in the Scientific Report :
2002
Please use the identifier:
http://dx.doi.org/10.1016/S0168-583X(01)01171-5 in citations.
Ion implantation of rare earth ions for light emitters
Ion implantation of rare earth ions for light emitters
We discuss the excitation and deexcitation processes for solid state optical emitters. At present, there is considerable interest in depositing a material system, which is compatible to silicon microelectronics processing and which emits electroluminescence (EL). We will compare the EL results of ra...
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Personal Name(s): | Buchal, C. |
---|---|
Wang, S. / Lu, F. / Carius, R. / Coffa, S. | |
Contributing Institute: |
Institut für Photovoltaik; IPV Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Nuclear instruments & methods in physics research / B, 190 (2002) S. 40 - 46 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2002
|
Physical Description: |
40 - 46 |
DOI: |
10.1016/S0168-583X(01)01171-5 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik Photovoltaik |
Series Title: |
Nuclear Instruments and Methods in Physics Research Section B
190 |
Subject (ZB): | |
Publikationsportal JuSER |
We discuss the excitation and deexcitation processes for solid state optical emitters. At present, there is considerable interest in depositing a material system, which is compatible to silicon microelectronics processing and which emits electroluminescence (EL). We will compare the EL results of rare earth doped transistors in silicon with doped insulators and doped wide bandgap semiconductors, especially Er in Si (a source for 1.5 mum) as well as Er and Tb in SiO2, Si3N4 and AIN, which are sources for infrared and visible light. The most impressive results are achieved by RE doped GaN film devices, which cover the entire visible spectrum. (C) 2002 Elsevier Science B.V. All rights reserved. |