This title appears in the Scientific Report :
2008
Please use the identifier:
http://dx.doi.org/10.1016/j.tsf.2008.07.015 in citations.
Microstructure of high-k dielectric LaLu03 films on (001) SrTi03 Substrates
Microstructure of high-k dielectric LaLu03 films on (001) SrTi03 Substrates
The microstructure of dielectric LaLuO3 films grown on SrRuO3-buffered (001) SrTiO3 substrates is investigated by means of transmission electron microscopy. A multi-domain structure is observed at the film areas close to the interface between the LaLuO3 and SrRuO3 layers in both cross-section and pl...
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Personal Name(s): | Chen, H. Y. |
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Jia, C. L. / Schubert, J. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 Mikrostrukturforschung; IFF-8 JARA-FIT; JARA-FIT |
Published in: | Thin solid films, 517 (2008) S. 631 - 634 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2008
|
Physical Description: |
631 - 634 |
DOI: |
10.1016/j.tsf.2008.07.015 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Thin Solid Films
517 |
Subject (ZB): | |
Publikationsportal JuSER |
The microstructure of dielectric LaLuO3 films grown on SrRuO3-buffered (001) SrTiO3 substrates is investigated by means of transmission electron microscopy. A multi-domain structure is observed at the film areas close to the interface between the LaLuO3 and SrRuO3 layers in both cross-section and plan-view samples. In these areas, the domains grow with either the 110 or the [001] crystallographic direction parallel to the normal of the film. With increasing film thickness, the [0011 domains are found togrowoverthe other types, resulting in a microstructure of [001]-orientated domains with 90 degrees in-plane rotation in the top part of the film. Lattice defects such as dislocations and lattice strain at the domain boundaries are studied and discussed in the light of the difference between the lattice parameters. (C) 2008 Elsevier B.V. All rights reserved. |