This title appears in the Scientific Report :
2002
Modelling of polarization charge induced asymmetry of IV-characteristics for AlN/GaN based resonant tunneling structures
Modelling of polarization charge induced asymmetry of IV-characteristics for AlN/GaN based resonant tunneling structures
Saved in:
Personal Name(s): | Indlekofer, K. M. |
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Donà, E. / Malindretos, J. / Bertelli, M. / Kocan, M. / Rizzi, A. / Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: |
IWN 2002 : International Workshop on Nitride Semiconductors |
Imprint: |
2002
|
Conference: | Aachen 2002-07-22 |
Document Type: |
Talk (non-conference) |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |