This title appears in the Scientific Report :
2008
Please use the identifier:
http://hdl.handle.net/2128/17050 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.2981524 in citations.
Atomic structure of the interface between SrTi03 thin films and Si(001) substrates
Atomic structure of the interface between SrTi03 thin films and Si(001) substrates
The structure of the SrTiO3/Si interface is determined by high-angle annular dark field imaging in combination with a recently developed technique based on aberration-corrected high-resolution transmission electron microscopy. At the interface, a monolayer of SrO faces the terminating plane of silic...
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Personal Name(s): | Mi, S. B. |
---|---|
Jia, C. L. / Vaithyanathan, V. / Houben, L. / Schubert, J. / Schlom, D. G. / Urban, K. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT Mikrostrukturforschung; IFF-8 |
Published in: | Applied physics letters, 93 (2008) S. 101913 |
Imprint: |
Melville, NY
American Institute of Physics
2008
|
Physical Description: |
101913 |
DOI: |
10.1063/1.2981524 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics Letters
93 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.2981524 in citations.
The structure of the SrTiO3/Si interface is determined by high-angle annular dark field imaging in combination with a recently developed technique based on aberration-corrected high-resolution transmission electron microscopy. At the interface, a monolayer of SrO faces the terminating plane of silicon. In this monolayer, the strontium atoms lie above the face-center of four silicon atoms in the terminating plane, and the oxygen atoms are located directly above the terminating silicon atoms. This structure, which is the dominant type of interface structure observed in this system, agrees with one of the interface structures predicted by first-principles calculations. (C) 2008 American Institute of Physics. |