This title appears in the Scientific Report :
2002
Please use the identifier:
http://dx.doi.org/10.1109/55.974794 in citations.
Please use the identifier: http://hdl.handle.net/2128/1955 in citations.
AlGaN/GaN HEMTs on (111) silicon substrates
AlGaN/GaN HEMTs on (111) silicon substrates
AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductan...
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Personal Name(s): | Javorka, P. |
---|---|
Alam, A. / Wolter, M. / Fox, P. T. / Marso, M. / Heuken, M. / Lüth, H. / Kordos, P. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | IEEE Electron Device Letters, 23 (2002) S. 4 - 6 |
Imprint: |
New York, NY
IEEE
2002
|
Physical Description: |
4 - 6 |
DOI: |
10.1109/55.974794 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
IEEE Electron Device Letters
23 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/1955 in citations.
AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and f(max)/f(T) = 0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling similar to16 W/mm static heat dissipation. |