This title appears in the Scientific Report :
2002
Please use the identifier:
http://dx.doi.org/10.1007/s003390101056 in citations.
III-V semiconductor interface properties as a knowledge basis for modern heterostructure devices
III-V semiconductor interface properties as a knowledge basis for modern heterostructure devices
Some examples of interface studies are reported which show their close link with progress in III-V modem semiconductor device physics and technology. The surface electronic properties investigated in-situ by reflectance anisotropy spectroscopy during InGaP/InP growth (metal-organic vapor-phase epita...
Saved in:
Personal Name(s): | Rizzi, A. |
---|---|
Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Applied physics / A, 75 (2002) S. 69 - 77 |
Imprint: |
Berlin
Springer
2002
|
Physical Description: |
69 - 77 |
DOI: |
10.1007/s003390101056 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Applied Physics A
75 |
Subject (ZB): | |
Publikationsportal JuSER |
Some examples of interface studies are reported which show their close link with progress in III-V modem semiconductor device physics and technology. The surface electronic properties investigated in-situ by reflectance anisotropy spectroscopy during InGaP/InP growth (metal-organic vapor-phase epitaxy) are essential for the control of ordering phenomena in these layers, which is relevant for high-performance optoelectronic devices. Studies of electronic interface states at metal/narrow-gap III-V semiconductors are presented, which enabled the successful preparation of semiconductor/superconductor hybrid devices. For group-III nitrides with wurtzite structure the presence of fixed polarization interface charges yields new challenges in order to understand and control Schottky-barrier heights, band offsets and 2D confinement in heterostructure field-effect transistors. |