This title appears in the Scientific Report :
2002
Please use the identifier:
http://dx.doi.org/10.1063/1.1435067 in citations.
Please use the identifier: http://hdl.handle.net/2128/1958 in citations.
Comment on : Influence of crystal polarity on the properties of Pt/GaN Schottky diodes (77 (2000), S. 2012)
Comment on : Influence of crystal polarity on the properties of Pt/GaN Schottky diodes (77 (2000), S. 2012)
Saved in:
Personal Name(s): | Rizzi, A. |
---|---|
Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Applied physics letters, 80 (2002) S. 530 - 531 |
Imprint: |
Melville, NY
American Institute of Physics
2002
|
Physical Description: |
530 - 531 |
DOI: |
10.1063/1.1435067 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Applied Physics Letters
80 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/1958 in citations.
Description not available. |