This title appears in the Scientific Report :
2002
Please use the identifier:
http://dx.doi.org/10.1016/S0167-9317(01)00594-9 in citations.
MBE-growth of a Ge-CoSi2 heterostructure for vertical metal-semiconductor-metal photodetectors
MBE-growth of a Ge-CoSi2 heterostructure for vertical metal-semiconductor-metal photodetectors
We report on the growth and structural characterisation of a novel single crystalline, epitaxial Ge-CoSi2-Si(111) heterostructure suitable for the fabrication of a vertical metal-semiconductor-metal photodetector for the wavelength of 1.55 mum. The CoSi2, layer was grown by a special epitaxy method,...
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Personal Name(s): | Winnerl, S. |
---|---|
Kappius, L. / Buca, D. / Lenk, S. / Buchal, Ch. / Mantl, S. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Microelectronic engineering, 60 (2002) S. 191 - 196 |
Imprint: |
[S.l.] @
Elsevier
2002
|
Physical Description: |
191 - 196 |
DOI: |
10.1016/S0167-9317(01)00594-9 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Microelectronic Engineering
60 |
Subject (ZB): | |
Publikationsportal JuSER |
We report on the growth and structural characterisation of a novel single crystalline, epitaxial Ge-CoSi2-Si(111) heterostructure suitable for the fabrication of a vertical metal-semiconductor-metal photodetector for the wavelength of 1.55 mum. The CoSi2, layer was grown by a special epitaxy method, named allotaxy. The Ge layer was grown by surfactant-mediated epitaxy. The growth parameters for the CoSi2, layer were optimised in order to suppress the formation of pinholes. A thin layer of silicon and Sb as a surfactant allowed layer-by-layer growth of Ge on the CoSi2, layer. (C) 2002 Elsevier Science B.V. All rights reserved. |