This title appears in the Scientific Report :
2002
Please use the identifier:
http://hdl.handle.net/2128/262 in citations.
Fabrication and characterization of ultra-fast Si-based detectors for near-infrared wavelenghts
Fabrication and characterization of ultra-fast Si-based detectors for near-infrared wavelenghts
This thesis presents two different concepts for the fabrication of ultrafast metal-semiconductor-metal (MSM) photodetectors, which are to be used in the near-infrared wavelength regime and which are compatible to silicon processing techniques. To achieve this goal, we have grown Si-Si$_{1-x}$Ge$_{x}...
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Personal Name(s): | Buca, Dan Mihai (Corresponding author) |
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Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2002
|
Physical Description: |
VII, 97 p. |
Dissertation Note: |
Köln, Univ., Diss., 2002 |
Document Type: |
Book Dissertation / PhD Thesis |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Berichte des Forschungszentrums Jülich
4075 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
This thesis presents two different concepts for the fabrication of ultrafast metal-semiconductor-metal (MSM) photodetectors, which are to be used in the near-infrared wavelength regime and which are compatible to silicon processing techniques. To achieve this goal, we have grown Si-Si$_{1-x}$Ge$_{x}$ undulating layer superlattices with x=0.39 and 0.45 by molecular beam epitaxy (MBE) an top of epitaxial implanted COSi$_{2}$ layers and fabricated "vertical" MSM detectors. The devices show a quantum efficiency of 5% for the wavelength of 1320 nm and 0.9 % for 1550 nm. We performed time response measurements, using a Ti:sapphire laser and an optical parametric oscillator which generates ultrafast pulses at infrared wavelengths. An electrical response time of 11.6 ps füll width at half maximum (FWHM) was obtained at a wavelength of 1300 nm. At 1550 nm a response time of 9.4 ps was measured. In a second approach, we have grown pure Ge by MBE an Si(111). The sensitive volumes are 270 nm thick Ge films. Interdigitated Cr metal top electrodes of 1.5 - 3 $\mu$m spacing and identical finger width form Schottky contacts to the Ge film. These detectors show a response time of 12.5 ps füll width at half maximum both at 1300 nm and 1550 nm. The temporal response is limited by the transit time of the carriers between the electrodes. |