This title appears in the Scientific Report :
2002
Please use the identifier:
http://hdl.handle.net/2128/1960 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1519958 in citations.
Metal-germanium-metal ultrafast infrared detectors
Metal-germanium-metal ultrafast infrared detectors
We demonstrate silicon-based ultrafast metal-semiconductor-metal (MSM) photodetectors for near infrared optocommunication wavelengths. They show a response time of 12.5 ps full width at half maximum (FWHM) at both 1300 and 1550 nm wavelengths. The overall external quantum efficiencies are 13% at 132...
Saved in:
Personal Name(s): | Buca, D. |
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Winnerl, S. / Lenk, S. / Mantl, S. / Buchal, Ch. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Journal of applied physics, 92 (2002) S. 7599 - 7605 |
Imprint: |
Melville, NY
American Institute of Physics
2002
|
Physical Description: |
7599 - 7605 |
DOI: |
10.1063/1.1519958 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Journal of Applied Physics
92 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.1519958 in citations.
We demonstrate silicon-based ultrafast metal-semiconductor-metal (MSM) photodetectors for near infrared optocommunication wavelengths. They show a response time of 12.5 ps full width at half maximum (FWHM) at both 1300 and 1550 nm wavelengths. The overall external quantum efficiencies are 13% at 1320 nm and 7.5% at 1550 nm. The sensitive volumes are 270 nm thick Ge films, grown on Si(111) by molecular beam epitaxy. Interdigitated Cr metal top electrodes with 1.5-5 mum spacing and identical finger width form Schottky contacts to the Ge film. A Ti-sapphire femtosecond laser with an optical parametric oscillator and an electro-optic sampling system are used to evaluate the temporal response, which is limited by the transit time of the carriers between electrodes. In addition, results on Si-Ge MSM heterostructure detectors with plate capacitor geometry are presented. At 1550 nm an ultrafast response of 9.4 ps FWHM and an overall quantum efficiency of 0.9% are measured. (C) 2002 American Institute of Physics. |