This title appears in the Scientific Report :
2002
Please use the identifier:
http://hdl.handle.net/2128/1961 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1483121 in citations.
Fast time response from Si-SiGe undulating layer superlattices
Fast time response from Si-SiGe undulating layer superlattices
We have grown Si-Si1-xGex undulating layer superlattices with x=0.39 and 0.45 by molecular-beam epitaxy on top of epitaxial implanted CoSi2 layers and fabricated vertical metal-semiconductor-metal detectors. The detectors show a quantum efficiency of 5% for the wavelength of 1320 nm and 0.9% for 155...
Saved in:
Personal Name(s): | Buca, D. |
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Winnerl, S. / Lenk, S. / Buchal, Ch. / Xu, D.-X. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Applied physics letters, 80 (2002) S. 4172 - 4174 |
Imprint: |
Melville, NY
American Institute of Physics
2002
|
Physical Description: |
4172 - 4174 |
DOI: |
10.1063/1.1483121 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Applied Physics Letters
80 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.1483121 in citations.
We have grown Si-Si1-xGex undulating layer superlattices with x=0.39 and 0.45 by molecular-beam epitaxy on top of epitaxial implanted CoSi2 layers and fabricated vertical metal-semiconductor-metal detectors. The detectors show a quantum efficiency of 5% for the wavelength of 1320 nm and 0.9% for 1550 nm. We performed temporal response measurements, using a Ti:sapphire laser and an optical parametric oscillator which generates ultrafast pulses at infrared wavelengths. An electrical response time of 16 ps full width at half maximum was obtained at a wavelength of 1300 nm. (C) 2002 American Institute of Physics. |