This title appears in the Scientific Report :
2002
Please use the identifier:
http://dx.doi.org/10.1016/S0167-9317(02)00790-6 in citations.
Fast IR Si/SiGe superlattice MSM photodetectors with buried CoSi2 contacts
Fast IR Si/SiGe superlattice MSM photodetectors with buried CoSi2 contacts
We fabricated vertical metal-semiconductor-metal (MSM) detectors with Si/Si1-xGex (x = 0.39 and 0.45) superlattices as active detector regions. An epitaxial buried CoSi2 contact served as the bottom electrode and a Cr contact as the top electrode. The superlattices, grown by molecular beam epitaxy,...
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Personal Name(s): | Winnerl, S. |
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Buca, D. / Lenk, S. / Buchal, Ch. / Mantl, S. / Xu, D.-X. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Microelectronic engineering, 64 (2002) S. 205 - 209 |
Imprint: |
[S.l.] @
Elsevier
2002
|
Physical Description: |
205 - 209 |
DOI: |
10.1016/S0167-9317(02)00790-6 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Microelectronic Engineering
64 |
Subject (ZB): | |
Publikationsportal JuSER |
We fabricated vertical metal-semiconductor-metal (MSM) detectors with Si/Si1-xGex (x = 0.39 and 0.45) superlattices as active detector regions. An epitaxial buried CoSi2 contact served as the bottom electrode and a Cr contact as the top electrode. The superlattices, grown by molecular beam epitaxy, showed vertically ordered SiGe islands. With the MSM detectors we obtained quantum efficiencies of 5% for the wavelength of 1.32 mum and 1% for 1.55 mum. Using a Ti:sapphire laser and an optical parametric oscillator which generates ultrafast pulses at IR wavelengths, the temporal response of the MSM detectors was measured. The detectors showed response times of 12 ps. (C) 2002 Elsevier Science B.V. All rights reserved. |