This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1063/1.1413488 in citations.
Please use the identifier: http://hdl.handle.net/2128/1313 in citations.
Comparative anomalous small-angle X-ray scattering study of hotwire and plasma grown amorphous silicon-germanium alloys
Comparative anomalous small-angle X-ray scattering study of hotwire and plasma grown amorphous silicon-germanium alloys
The nanostructure of hydrogenated amorphous silicon-germanium alloys, a-Si1-xGex:H, prepared by the hotwire deposition technique (x=0.06-0.79) and by the plasma enhanced chemical vapor deposition technique (x=0 and 0.50) was analyzed by anomalous small-angle x-ray scattering experiments. For all all...
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Personal Name(s): | Goerigk, G. |
---|---|
Williamson, D. L. | |
Contributing Institute: |
Streumethoden; IFF-STM |
Published in: | Journal of applied physics, 90 (2001) S. 5808 - 5811 |
Imprint: |
Melville, NY
American Institute of Physics
2001
|
Physical Description: |
5808 - 5811 |
DOI: |
10.1063/1.1413488 |
Document Type: |
Journal Article |
Research Program: |
Methodenentwicklung für Synchrotron- und Neutronenstrahlung |
Series Title: |
Journal of Applied Physics
90 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/1313 in citations.
The nanostructure of hydrogenated amorphous silicon-germanium alloys, a-Si1-xGex:H, prepared by the hotwire deposition technique (x=0.06-0.79) and by the plasma enhanced chemical vapor deposition technique (x=0 and 0.50) was analyzed by anomalous small-angle x-ray scattering experiments. For all alloys with x >0 the Ge component was found to be inhomogeneously distributed with correlation lengths of about 1 nm. A systematic increase of the separated scattering was found due to the increasing Ge concentration. The different preparation techniques show significant differences in the Ge distribution. (C) 2001 American Institute of Physics. |