This title appears in the Scientific Report :
2015
Please use the identifier:
http://dx.doi.org/10.1002/pssa.201431496 in citations.
Shunt mitigation in ZnO:Al/i-ZnO/CdS/Cu(In,Ga)Se 2 solar modules by the i-ZnO/CdS buffer combination
Shunt mitigation in ZnO:Al/i-ZnO/CdS/Cu(In,Ga)Se 2 solar modules by the i-ZnO/CdS buffer combination
The influence of the i-ZnO/CdS buffer layer on intentionally produced defects in Cu(In,Ga)Se2 (CIGS) mini-modules is investigated by electroluminescence (EL) imaging. Macroscopic shunts of the dimension of 100 μm in length and several μm in width were produced by mechanically removing locally one or...
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Personal Name(s): | Misic, B. |
---|---|
Pieters, Bart / Theisen, J. P. / Gerber, A. / Rau, U. (Corresponding author) | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | Physica status solidi / A, 212 (2015) 3, S. 541 - 546 |
Imprint: |
Weinheim
Wiley-VCH
2015
|
DOI: |
10.1002/pssa.201431496 |
Document Type: |
Journal Article |
Research Program: |
Solar cells of the next generation |
Publikationsportal JuSER |
The influence of the i-ZnO/CdS buffer layer on intentionally produced defects in Cu(In,Ga)Se2 (CIGS) mini-modules is investigated by electroluminescence (EL) imaging. Macroscopic shunts of the dimension of 100 μm in length and several μm in width were produced by mechanically removing locally one or several of the layers during the module production process. After creating the defects the modules were finished in the usual way. It is found that heavy shunts were produced whenever the doped ZnO:Al came into contact with the Mo back contact. The decline of photovoltaic performance is seen by a decrease of the EL intensity of the damaged cell. In contrast, considerable shunt mitigation was observed whenever the i-ZnO/CdS buffer combination was present. |