This title appears in the Scientific Report :
2007
Paramagnetic centers in amorphous and microcrystalline silicon irradiated with 2 MeV electrons
Paramagnetic centers in amorphous and microcrystalline silicon irradiated with 2 MeV electrons
Amorphous and microcrystalline silicon are well known materials for thin film large area electronics. The defects in the material are an important issue for the device quality and the manufacturing process optimization. We study defects in thin film silicon with electron spin resonance (ESR). In ord...
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Personal Name(s): | Astakhov, A. |
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Finger, F. / Carius, R. / Lambertz, A. / Neklyudov, I. / Petrusenko, Y. / Borysenko, V. / Barankov, D. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Voprosy atomnoj nauki i techniki, 2 (2007) S. 39 - 42 |
Imprint: |
Char'kov
Char'kov Institute of Physics and Technology
2007
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Physical Description: |
39 - 42 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Problems of Atomic Science and Technology (= Voprosy atomnoj nauki i techniki = Pytannja atomnoi nauky i techniky), Series Plasma Physics (= Serija Fizika plazmy)
2 |
Subject (ZB): | |
Publikationsportal JuSER |
Amorphous and microcrystalline silicon are well known materials for thin film large area electronics. The defects in the material are an important issue for the device quality and the manufacturing process optimization. We study defects in thin film silicon with electron spin resonance (ESR). In order to vary the defect density in a wide range 2 MeV electron bombardment at 100 K was applied with dose as high as 10(18) e*cm(-2). Samples were investigated after deposition, after irradiation and between the annealing steps. The spin density (N-s) in the material was varied over 3 orders of magnitude. Strong satellites with g approximate to 2.010 and g approximate to 2.000 were observed on the shoulders of the dangling bond line. The initial N-s and the shape of the resonance line. were restored after annealing. |