This title appears in the Scientific Report :
2007
Please use the identifier:
http://hdl.handle.net/2128/17140 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.2824456 in citations.
Temperature stability of ZnO:Al film properties for poly-Si thin-film devices
Temperature stability of ZnO:Al film properties for poly-Si thin-film devices
The crystallization of thin silicon films at temperatures between 425 and 600 degrees C was investigated on glass substrates coated with Al-doped zinc oxide (ZnO:Al). Bare ZnO:Al layers degrade at the crystallization temperatures used. A silicon layer on top, however, efficiently prevents deteriorat...
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Personal Name(s): | Lee, K. Y. |
---|---|
Becker, C. / Muske, M. / Ruske, F. / Gall, S. / Rech, B. / Berginski, M. / Hüpkes, J. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Applied physics letters, 91 (2007) S. 241911 |
Imprint: |
Melville, NY
American Institute of Physics
2007
|
Physical Description: |
241911 |
DOI: |
10.1063/1.2824456 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Applied Physics Letters
91 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.2824456 in citations.
The crystallization of thin silicon films at temperatures between 425 and 600 degrees C was investigated on glass substrates coated with Al-doped zinc oxide (ZnO:Al). Bare ZnO:Al layers degrade at the crystallization temperatures used. A silicon layer on top, however, efficiently prevents deterioration. The resistivity was even found to drop from 4.3x10(-4) Omega cm for the as deposited ZnO:Al to 2.2x10(-4) Omega cm in the case of aluminium induced crystallization and to 3.4x10(-4) Omega cm for solid phase crystallization. The temperature-stable conductivity of ZnO:Al films coated with Si opens up appealing options for the production of polycrystalline silicon thin-film solar cells with transparent front contacts. (C) 2007 American Institute of Physics. |