This title appears in the Scientific Report :
2008
Please use the identifier:
http://dx.doi.org/10.1016/j.jnoncrysol.2007.09.035 in citations.
Influence of crystalline volume fraction on the performance of high mobility microcrystalline silicon thin-film transistors
Influence of crystalline volume fraction on the performance of high mobility microcrystalline silicon thin-film transistors
The influence of the crystalline volume fraction of hydrogenated microcrystalline silicon on the device performance of thin-film transistors fabricated at temperatures below 200 degrees C was investigated. Transistors employing microcrystalline silicon channel material prepared close to the transiti...
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Personal Name(s): | Chan, K. Y. |
---|---|
Knipp, D. / Gordijn, A. / Stiebig, H. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Journal of non-crystalline solids, 354 (2008) S. 2505 - 2508 |
Imprint: |
Amsterdam [u.a.]
Elsevier Science
2008
|
Physical Description: |
2505 - 2508 |
DOI: |
10.1016/j.jnoncrysol.2007.09.035 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Journal of Non-Crystalline Solids
354 |
Subject (ZB): | |
Publikationsportal JuSER |
The influence of the crystalline volume fraction of hydrogenated microcrystalline silicon on the device performance of thin-film transistors fabricated at temperatures below 200 degrees C was investigated. Transistors employing microcrystalline silicon channel material prepared close to the transition to amorphous growth regime exhibit the highest charge carrier mobilities exceeding 50 cm(2)/V s. The device parameters like the charge carrier mobility, the threshold voltage and the subthreshold slope will be discussed with respect to the crystalline volume fraction of the intrinsic microcrystalline silicon material. (C) 2007 Elsevier B.V. All rights reserved. |