This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1016/S0022-3093(01)00309-X in citations.
Quantitative ASAXS of germanium inhomogeneities in amorphous silicon-germanium alloys
Quantitative ASAXS of germanium inhomogeneities in amorphous silicon-germanium alloys
The nanostructure of hydrogenated amorphous silicon germanium alloys, a-Si1-xGex:H (x similar to 0.15 to 0.57), prepared by different plasma enhanced chemical vapor deposition (PECVD) techniques was analyzed by anomalous small-angle X-ray scattering (ASAXS) experiments. For alloys with x > 0.2 th...
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Personal Name(s): | Goerigk, G. |
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Williamson, D. L. | |
Contributing Institute: |
Streumethoden; IFF-STM |
Published in: | Journal of non-crystalline solids, 281 (2001) S. 181 - 188 |
Imprint: |
Amsterdam [u.a.]
Elsevier Science
2001
|
Physical Description: |
181 - 188 |
DOI: |
10.1016/S0022-3093(01)00309-X |
Document Type: |
Journal Article |
Research Program: |
Methodenentwicklung für Synchrotron- und Neutronenstrahlung |
Series Title: |
Journal of Non-Crystalline Solids
281 |
Subject (ZB): | |
Publikationsportal JuSER |
The nanostructure of hydrogenated amorphous silicon germanium alloys, a-Si1-xGex:H (x similar to 0.15 to 0.57), prepared by different plasma enhanced chemical vapor deposition (PECVD) techniques was analyzed by anomalous small-angle X-ray scattering (ASAXS) experiments. For alloys with x > 0.2 the Ge component was found to be inhomogeneously distributed with correlation lengths from 0.6 to 1.6 nm. From the analysis of extended ASAXS measurements at 16 X-ray energies in combination with densitometric measurements the volume fractions, densities and Ge-concentrations of the inhomogeneities were deduced. (C) 2001 Elsevier Science B.V. All rights reserved. |