This title appears in the Scientific Report : 2003 

Growth and oxidation of a Ni3Al alloy on Ni(100)
Wehner, A.
Jeliazova, Y. / Franchy, R.
Institut für Grenzflächen und Vakuumtechnologien; ISG-3
Surface science, 531 (2003) S. 287 - 294
Amsterdam Elsevier 2003
287 - 294
10.1016/S0039-6028(03)00516-8
Journal Article
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
Surface Science 531
J
Please use the identifier: http://dx.doi.org/10.1016/S0039-6028(03)00516-8 in citations.
The growth and oxidation of a thin film of Ni3Al grown on Ni(1 0 0) were studied using Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and high resolution electron energy loss spectroscopy (EELS). At 300 K. a 12 Angstrom thick layer of aluminium was deposited on a Ni(1 0 0) surface and subsequently annealed to 1150 K resulting in a thin film of Ni3Al which grows with the (10 0) plane parallel to the (10 0) surface of the substrate. Oxidation at 300 K of Ni3Al/Ni(1 0 0) until saturation leads to the growth of an aluminium oxide layer consisting of different alumina phases. By annealing up to 1000 K, a well ordered film of the Al2O3 film is formed which exhibits in the EEL spectra Fuchs-Kliewer phonons at 420, 640 and 880 cm(-1). The LEED pattern of the oxide shows a twelvefold ring structure. This LEED pattern is explained by two domains with hexagonal structure which are rotated by 90degrees with respect to each other. The lattice constant of the hexagonal structure amounts to similar to2.87 Angstrom. The EELS data and the LEED pattern suggest that the gamma'-Al2O3 phase is formed which grows with the (1 1 1) plane parallel to the Ni(1 0 0) surface. (C) 2003 Elsevier Science B.V. All rights reserved.