This title appears in the Scientific Report :
2003
Please use the identifier:
http://hdl.handle.net/2128/1233 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1544649 in citations.
Frequency and temperature dependence of the relative permittivity in ferroelectrics: Monte-Carlo simulation study
Frequency and temperature dependence of the relative permittivity in ferroelectrics: Monte-Carlo simulation study
In this article, the domain wall densities calculated from simulated domain configurations are used to estimate the domain wall contributions to the dielectric permittivity of a ferroelectric material. The configurations were calculated using a Monte-Carlo model proposed by B. G. Potter et al. [J. A...
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Personal Name(s): | Bolten, D. |
---|---|
Böttger, U. / Waser, R. | |
Contributing Institute: |
Elektrokeramische Materialien; IFF-EKM |
Published in: | Journal of applied physics, 93 (2003) S. 2890 - 2894 |
Imprint: |
Melville, NY
American Institute of Physics
2003
|
Physical Description: |
2890 - 2894 |
DOI: |
10.1063/1.1544649 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Journal of Applied Physics
93 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.1544649 in citations.
In this article, the domain wall densities calculated from simulated domain configurations are used to estimate the domain wall contributions to the dielectric permittivity of a ferroelectric material. The configurations were calculated using a Monte-Carlo model proposed by B. G. Potter et al. [J. Appl. Phys. 87, 4415 (2000)]. The temperature and frequency dependence of the contributions are analyzed and compared to experimental results obtained on PbZrxTi1-xO3 thin films. (C) 2003 American Institute of Physics. |