This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1007/s00339-003-2314-2 in citations.
Photon-assisted tunneling versus tunneling of excited electrons in metal-insulator-metal junctions
Photon-assisted tunneling versus tunneling of excited electrons in metal-insulator-metal junctions
Photocurrent measurements in Ag-Al2O3-Al metal-insulator-metal junctions under illumination with ultra-short laser pulses reveal that tunneling and internal photoemission of excited electrons are the dominating transport mechanisms. Photon-assisted tunneling is observed under rare conditions that de...
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Personal Name(s): | Thon, A. |
---|---|
Merschdorf, M. / Pfeiffer, W. / Klamroth, T. / Saalfrank, P. / Diesing, D. | |
Contributing Institute: |
Institut für Grenzflächen und Vakuumtechnologien; ISG-3 |
Published in: | Applied physics / A, 78 (2003) S. 189 - 199 |
Imprint: |
Berlin
Springer
2003
|
Physical Description: |
189 - 199 |
DOI: |
10.1007/s00339-003-2314-2 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Applied Physics A
78 |
Subject (ZB): | |
Publikationsportal JuSER |
Photocurrent measurements in Ag-Al2O3-Al metal-insulator-metal junctions under illumination with ultra-short laser pulses reveal that tunneling and internal photoemission of excited electrons are the dominating transport mechanisms. Photon-assisted tunneling is observed under rare conditions that depend critically on the preparation of the interface. The comparison of time-resolved two-pulse correlation measurements with model calculations shows that the photon-induced transport of excited electrons is well described using a one-dimensional many-particle model for two coupled metallic leads, whereas a single-particle model for nonresonant excitation in a rectangular double-minimum potential reveals the signature of photon-assisted tunneling. |