This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1063/1.1576498 in citations.
Please use the identifier: http://hdl.handle.net/2128/1964 in citations.
Self-assembling of Ge on finite Si(001) areas comparable with the island size
Self-assembling of Ge on finite Si(001) areas comparable with the island size
Voids in ultrathin oxide and electron-beam lithography-patterned windows were used to deposit Ge selectively. The number of islands is a function of the total amount of Ge deposited in a void or window. Our results show that islands smaller than the void/window size nucleate mainly near the peripher...
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Personal Name(s): | Vescan, L. |
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Stoica, T. / Holländer, B. / Nassiopoulou, A. / Olzierski, A. / Raptis, I. / Sutter, E. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Applied physics letters, 82 (2003) S. 3517 - 3519 |
Imprint: |
Melville, NY
American Institute of Physics
2003
|
Physical Description: |
3517 - 3519 |
DOI: |
10.1063/1.1576498 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Applied Physics Letters
82 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/1964 in citations.
Voids in ultrathin oxide and electron-beam lithography-patterned windows were used to deposit Ge selectively. The number of islands is a function of the total amount of Ge deposited in a void or window. Our results show that islands smaller than the void/window size nucleate mainly near the periphery. This might be due to the tensile strain in the Si substrate near the oxide edge. The interruption of the wetting layer reduces the loss of excitons by lateral diffusion, resulting in considerable increase in optical emission from islands. (C) 2003 American Institute of Physics. |