This title appears in the Scientific Report :
2003
Helium Implantation and Annealing for the Fabrication of Strained Si on Thin Relaxed SiGe Layers
Helium Implantation and Annealing for the Fabrication of Strained Si on Thin Relaxed SiGe Layers
Saved in:
Personal Name(s): | Mantl, S. |
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Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: |
MRS |
Imprint: |
2003
|
Conference: | San Francisco, CA 2003-04-23 |
Document Type: |
Conference Presentation |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |