This title appears in the Scientific Report :
2002
Please use the identifier:
http://dx.doi.org/10.1143/JJAP.41.7202 in citations.
Influence of defects on the properties of a 2D ferroelectric: A Monte-Carlo simulation study
Influence of defects on the properties of a 2D ferroelectric: A Monte-Carlo simulation study
In this article, Monte-Carlo simulation methods were used to investigate the influence of different types of defects on the properties of a 2-dimensional ferroelectric. To this end, a recently published model by B. G. Potter et al. [J. Appl. Phys. 87 (2000) 4415] was extended to include simple defec...
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Personal Name(s): | Bolten, D. |
---|---|
Böttger, U. / Waser, R. | |
Contributing Institute: |
Elektrokeramische Materialien; IFF-EKM |
Published in: | Japanese journal of applied physics, 41 (2002) S. 7202 - 7210 |
Imprint: |
Tokyo
Inst. of Pure and Applied Physics
2002
|
Physical Description: |
7202 - 7210 |
DOI: |
10.1143/JJAP.41.7202 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Japanese Journal of Applied Physics Part 1: Regular Papers, Short Notes and Review Papers
41 |
Subject (ZB): | |
Publikationsportal JuSER |
In this article, Monte-Carlo simulation methods were used to investigate the influence of different types of defects on the properties of a 2-dimensional ferroelectric. To this end, a recently published model by B. G. Potter et al. [J. Appl. Phys. 87 (2000) 4415] was extended to include simple defects. The effect of these defects on the hysteresis curves was analyzed. The interaction of a single domain wall with a defect cluster was also investigated with this model. Furthermore, the simulation could be used to verify the dependence of the Rayleigh constant on the defect concentration, predicted by Boser [J. Appl. Phys. 62 (1987),1344] theoretically and recently found to be valid for donor-doped lead zirconate titanate (PZT) thin films [Bolten et al., Appl. Phys. Lett. 77 (2000) 3830]. The simulation provided evidence for the existence of a defect-driven relaxation process in ferroelectrics similar to the relaxation found in heavily disturbed systems. |