This title appears in the Scientific Report :
2003
Comparison of hafnium precursors for the MOCVD of HfO2 for gate dielectric applications
Comparison of hafnium precursors for the MOCVD of HfO2 for gate dielectric applications
Saved in:
Personal Name(s): | Teren, A. R. |
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Ehrhart, P. / Waser, R. / He, J. Q. / Jia, C. L. / Schumacher, M. / Lindner, J. / Baumann, P. K. / Leedham, T. J. / Rushworth, S. R. / Jones, A. C. | |
Contributing Institute: |
Elektrokeramische Materialien; IFF-EKM Mikrostrukturforschung; IFF-IMF |
Published in: |
International Symposium on Integrated Ferroelectrics (ISIF) |
Imprint: |
2003
|
Conference: | Colorado Springs, USA 2003-03-10 |
Document Type: |
Conference Presentation |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |