This title appears in the Scientific Report :
2003
Thin strain relaxed SiGe buffer layers on Si and SOI made by He ion implantation and annealing
Thin strain relaxed SiGe buffer layers on Si and SOI made by He ion implantation and annealing
Saved in:
Personal Name(s): | Mantl, S. |
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Holländer, B. / Hüging, N. / Luysberg, M. / Lenk, S. / Hogg, S. M. / Herzog, H.-J. / Hackbarth, T. / Loo, R. / Bauer, M. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-IMF Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: |
Third International Conference on SiGe(C) Epitaxy and Heterostructures, March 09.-12.2003, Sante Fe, New Mexico (USA), (ICSI 3) / ed.: D. Houghton, AIXTRON in coop. - S. 120 - 121 |
Imprint: |
2003
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Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Kondensierte Materie Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |